MD56V62160E-XXTA Ver la hoja de datos (PDF) - LAPIS Semiconductor Co., Ltd.

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MD56V62160E-XXTA

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Bank Interleave Random Row Read Cycle @CAS Latency = 2, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

CKE

High

CS

RAS

CAS

tRC

tRRD

ADDR RAa

CAa

A12,

A13

A10

RAa

RBb

CBb

RAc

CAc

RBb

RAc

DQ

QAa0 QAa1 QAa2 QAa3

QBb1 QBb2 QBb3 QBb4

QAc0 QAc1 QAc2 QAc3

WE

UDQM,

LDQM

Row Active

Row Active

Read Command

Read Command

(A-Bank)

(B-Bank)

(B-Bank)

(A-Bank)

Read Command

(A-Bank)

Precharge Command

(A-Bank)

Row Active

(A-Bank) Precharge Command

(B-Bank)

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