CPV364M4UPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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CPV364M4UPBF Datasheet PDF : 11 Pages
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CPV364M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
RthJC (IGBT)
Junction to case, each DIODE, one DIODE in conduction
RthJC (DIODE)
Case to sink, flat, greased surface
RthCS (MODULE)
Weight of module
TYP.
-
-
0.10
20
0.7
MAX.
2.0
3.0
-
-
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
V(BR)CES (1)
ΔV(BR)CES/ΔTJ
VGE = 0 V, IC = 250 µA
VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
VCE(on)
IC = 10 A
IC = 20 A
IC = 10 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 µA
3.0
Temperature coefficient of
threshold voltage
ΔVGE(th)/ΔTJ VCE = VGE, IC = 250 µA
-
Forward transconductance
gfe (2)
VCE = 100 V, IC = 10 A
11
Zero gate voltage collector current
VGE = 0 V, VCE = 600 V
-
ICES
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
Diode forward voltage drop
IC = 15 A
-
VFM
See fig. 13
IC = 15 A, TJ = 150 °C
-
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
Notes
(1) Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
(2) Pulse width 5.0 µs; single shot
TYP.
-
MAX. UNITS
-
V
0.63
-
V/°C
1.56 2.1
1.84
-
1.56
V
-
-
6.0
- 13
-
mV/°C
18
-
S
-
250
µA
-
3500
1.3
1.7
V
1.2
1.6
-
± 100 nA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94489
Revision: 01-Sep-08
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