CPV364M4UPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Lista de partido
CPV364M4UPBF Datasheet PDF : 11 Pages
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IGBT SIP Module
(Ultrafast IGBT)
CPV364M4UPbF
Vishay High Power Products
100
VR= 200V
TJ = 125°C
TJ = 25°C
80
IF = 30A
60
IF = 15A
40
IF = 5.0A
800
VR = 200V
TJ = 125°C
TJ = 25°C
600
IF = 30A
400
IF = 15A
IF = 5.0A
200
20
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
0
100
1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
100
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 15A
10
IF = 30A
IF = 5.0A
1
100
1000
dif /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 5.0A
I F = 15A
I F = 30A
100
100
1000
dif /dt - (A/µs)
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
Document Number: 94489
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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