CPV364M4UPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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CPV364M4UPBF Datasheet PDF : 11 Pages
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CPV364M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
1.8 RG = 10 Ω
T J = 150 °C
1.5
VCC = 480V
VGE = 15V
1.2
0.9
0.6
0.3
0.0
0
4
8
12
16
20
24
I C, Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
100
VGE
TJ
=
=
20V
125 oC
10
SAFE OPERATING AREA
1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
100
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94489
Revision: 01-Sep-08
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