CPV364M4UPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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CPV364M4UPBF Datasheet PDF : 11 Pages
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CPV364M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
20
18
16
14
12
10
8
6
4
2
0
0.1
100
5.85
Tc = 90°C
5.27
Tj = 125°C
Power Factor = 0.8
4.68
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
4.10
3.51
2.93
2.34
1.76
1.17
1
10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
0.59
0.00
100
20
16
TJ = 150°C
10
TJ = 25°C
VGE = 15V
20µs PULSE WIDTH
1
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
12
8
4
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
TJ = 150°C
10
TJ = 25°C
V CC = 10V
5µs PULSE WIDTH
1
5
6
7
8
9
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
2.0 VGE = 15V
80 us PULSE WIDTH
1.8
IC= 20A
1.6
IC= 10A
1.4
IC= 5.50A
1.2
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94489
Revision: 01-Sep-08
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