P4C1981-10JC Ver la hoja de datos (PDF) - Performance Semiconductor
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P4C1981-10JC Datasheet PDF : 10 Pages
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P4C1981/1981L, P4C1982/1982L
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
I Dynamic Operating Current*
CC
Temperature
Range
Commercial
Industrial
Military
–10 –12 –15 –20 –25 –35 –45 Unit
180 170 160 155 150 N/A N/A mA
N/A 180 170 160 155 150 N/A mA
N/A N/A 170 160 155 150 145 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
1
=
VIL,
CE
2
=
VIL,
OE
=
VIH
DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)
Symbol
Parameter
V
DR
I
CCDR
V for Data Retention
CC
Data Retention Current
Test Condition
Typ.*
Max
Min
VCC=
VCC=
Unit
2.0V 3.0V 2.0V 3.0V
2.0
V
10
15 600 900 µA
tCDR
Chip Deselect to
CE
1
or
CE
2
≥
VCC
–
0.2V,
0
ns
Data Retention Time
V
IN
≥
V
CC
–
0.2V
or
tR†
Operation Recovery Time
V
IN
≤
0.2V
tRC§
ns
*TA = +25°C
§tRC = Read Cycle Time
†This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
DATA RETENTION WAVEFORM
VCC
CE1 or CE2
DATA RETENTION MODE
t CDR
4.5V
VDR ≥ 2V
4.5V
tR
VDR
VIH
VIH
1348 07
83
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