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1N6820R Hoja de datos - Microsemi Corporation

1N6820 image

Número de pieza
1N6820R

componentes Descripción

Other PDF
  no available.

PDF
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page
2 Pages

File Size
64.4 kB

Fabricante
Microsemi
Microsemi Corporation Microsemi

Features
• Tungsten schottky barrier for low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6820) and reverse
   polarity (strap is cathode: 1N6820R)

Page Link's: 1  2 

Número de pieza
componentes Descripción
PDF
Fabricante
LOW REVERSE LEAKAGE SCHOTTKY DIODE
Ver
Microsemi Corporation
Low reverse leakage
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Rugao Dachang Electronics Co., Ltd
Low reverse leakage
Ver
Shanghai Leiditech Electronic Technology Co., Ltd
Low reverse leakage
Ver
Rugao Dachang Electronics Co., Ltd
LOW REVERSE LEAKAGE CHARACTERISTICS
Ver
Compensated Devices => Microsemi
LOW REVERSE LEAKAGE CHARACTERISTICS
Ver
Compensated Devices => Microsemi
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER ( Rev : V2 )
Ver
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER ( Rev : RevA )
Ver
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER ( Rev : RevA )
Ver
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER ( Rev : RevC )
Ver
Sensitron

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