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2SJ533 Hoja de datos - Renesas Electronics

2SJ533 image

Número de pieza
2SJ533

componentes Descripción
Silicon P Channel MOS FET High Speed Power Switching

Other PDF
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page
8 Pages

File Size
77 kB

Fabricante
Renesas
Renesas Electronics Renesas

•  Low on-resistance RDS (on)= 0.028 Ωtyp.

•  Low drive current.

•  4 V gate drive devices.

•  High speed switching.

 

2SJ533

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