The A416316B is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words X 16 bits. The A416316B is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.

FEATUREs
● Organization: 65,536 words X 16 bits
● Part Identification:
   - A416316B
   - A416316B-L (with self-refresh mode)
● High speed
   - 30/35/40 ns RAS access time
   - 16/18/20 ns column address access time
   - 10/11/12 ns CAS access time
● Low power consumption
   - Operating: 75mA (-30 max)
   - Standby: 3 mA (TTL)
● Separate CAS (UCAS ,LCAS ) for byte selection
● Self refresh mode
● 256 refresh cycles, 4 ms refresh interval
● Read-modify-write, RAS -only, CAS -before- RAS , Hidden refresh capability
● TTL-compatible, three-state I/O
● JEDEC standard packages
   - 400mil, 40-pin SOJ
   - 400mil, 40/44 TSOP type II package
● Single 5V power supply/built-in VBB generator