General Description
AO4629 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. This complementary N and P channel MOSFET configuration  is ideal for low Input Voltage inverter applications.

FEATUREs
N-Channel              P-Channel
VDS= 30V              -30V
ID = 6A (VGS=10V)  -5.5A (VGS =-10V)
RDS(ON)                 RDS(ON)
< 30mΩ(VGS=10V)   < 41mΩ(VGS=-10V)
< 42mΩ(VGS=4.5V)  < 74mΩ(VGS=-4.5V)