General Description
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Product Summary
   N-Channel                    P-Channel
   VDS= 30V                    -30V
   ID= 3.4A (VGS=10V)    -2.3A (VGS=-10V)
   RDS(ON) RDS(ON)
   < 60mΩ (VGS=10V)     < 115mΩ (VGS=-10V)
   < 70mΩ (VGS=4.5V)    < 150mΩ (VGS=-4.5V)
   < 90mΩ (VGS=2.5V)    < 200mΩ (VGS=-2.5V)