General Description
The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Product Summary
   N-Channel                   P-Channel
   VDS= 30V                   -30V
   ID= 3.5A (VGS=10V)   -2.7A (VGS=-10V)
   RDS(ON)                     RDS(ON)
   < 50mΩ (VGS=10V)    < 100mΩ (VGS=-10V)
   < 70mΩ (VGS=4.5V)   < 170mΩ (VGS=-4.5V)