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BB501M Hoja de datos - Hitachi -> Renesas Electronics

BB501M image

Número de pieza
BB501M

Other PDF
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PDF
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page
13 Pages

File Size
64.8 kB

Fabricante
Hitachi
Hitachi -> Renesas Electronics Hitachi

Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.5 dB typ. at f = 900 MHz
• Low noise; NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)

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Número de pieza
componentes Descripción
PDF
Fabricante
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
Renesas Electronics

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