General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.

FEATUREs
■ Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias
■ Internal switch to save external components
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio.

APPLICATIONs
■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
    ◆ digital and analog television tuners
    ◆ professional communication equipment.