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BTS410E2 Hoja de datos - Infineon Technologies

BTS410E2 image

Número de pieza
BTS410E2

componentes Descripción

Other PDF
  2013  

PDF
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page
16 Pages

File Size
312.2 kB

Fabricante
Infineon
Infineon Technologies Infineon

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.


FEATUREs
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


APPLICATION
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch ( Rev : 2003 )
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Infineon Technologies

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