CP324(2002) Hoja de datos - Central Semiconductor
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CP324
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2 Pages
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 21.65 x 21.65 MILS
Die Thickness 9.0 MILS
Gate Bonding Pad Area 5.5 x 5.5 MILS
Source Bonding Pad Area 5.9 x 13.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
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Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
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Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip
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Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip
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Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip
Central Semiconductor
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