CP357X Hoja de datos - Central Semiconductor
Número de pieza
CP357X
componentes Descripción
Other PDF
no available.
PDF
page
2 Pages
File Size
735.3 kB
Fabricante
Central Semiconductor
PROCESS DETAILS
Die Size 22 x 17 MILS
Die Thickness 5.9 MILS
Gate Bonding Pad Area 3.9 x 3.9 MILS
Source Bonding Pad Area 14 x 9 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
Número de pieza
componentes Descripción
PDF
Fabricante
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip
Central Semiconductor
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Share Link: