CP764X Hoja de datos - Central Semiconductor
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CP764X
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 21.7 x 17.7 MILS
Die Thickness 5.5 MILS
Gate Bonding Pad Area 4.7 x 4.7 MILS
Source Bonding Pad Area 6.1 x 7.9 MILS
Top Side Metalization Al-Si - 35,000Å
Back Side Metalization Au - 12,000Å
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