CPD109R Hoja de datos - Central Semiconductor
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CPD109R
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2 Pages
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618.9 kB
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Central Semiconductor
PROCESS DETAILS
Die Size 8.3 x 8.3 MILS
Die Thickness 3.9 MILS
Anode Bonding Pad Area 5.4 x 5.4 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 12,000Å
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Fabricante
Schottky Diode High Current, Low VF Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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