CPD98V Hoja de datos - Central Semiconductor
Número de pieza
CPD98V
componentes Descripción
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page
2 Pages
File Size
407.8 kB
Fabricante
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 16 x 16 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 12,000Å
Número de pieza
componentes Descripción
PDF
Fabricante
Schottky Diode High Current, Low VF Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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