CPD82X(2006) Hoja de datos - Central Semiconductor
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CPD82X
componentes Descripción
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1 Pages
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27.5 kB
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 14.6 x 14.6 MILS
Die Thickness 5.5 MILS
Anode Bonding pad Area 11.8 x 11.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
Número de pieza
componentes Descripción
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Fabricante
Schottky Diode Silicon High Current Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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