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DMG4N60SK3 Hoja de datos - Diodes Incorporated.

DMG4N60SK3 image

Número de pieza
DMG4N60SK3

Other PDF
  2015  

PDF
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page
8 Pages

File Size
380.7 kB

Fabricante
Diodes
Diodes Incorporated. Diodes

Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.


FEATUREs
• 100% Unclamped Inductive Switch (UIS) Test in Production
• Low Gate Input Resistance
• Low Input Capacitance
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)


APPLICATIONs
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions


Número de pieza
componentes Descripción
PDF
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8A 600V N-channel Enhancement Mode Power MOSFET
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Jiangsu Donghai Semiconductor Technology Co.,Ltd
7A 600V N-channel Enhancement Mode Power MOSFET
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Jiangsu Donghai Semiconductor Technology Co.,Ltd
2A 600V N-channel Enhancement Mode Power MOSFET ( Rev : V2 )
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Unspecified
10A 600V N-channel Enhancement Mode Power MOSFET
Ver
Jiangsu Donghai Semiconductor Technology Co.,Ltd
8A 600V N-channel Enhancement Mode Power MOSFET
Ver
Jiangsu Donghai Semiconductor Technology Co.,Ltd

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