Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

FEATUREs and Benefits
• DIOFET utilizes a unique patented process to monolithically
   integrate a MOSFET and a Schottky in a single die to deliver:
   • Low RDS(ON) – minimize conduction losses
   • Low VSD – reducing the losses due to body diode conduction
   • Low Qrr – lower Qrr of the integrated Schottky reduces body diode
      switching losses
   • Low gate capacitance (Qg/Qgs) ratio – reduces risk of 
      shoot-through or cross conduction currents at high frequencies
   • Avalanche rugged – IAR and EAR rated
• Small form factor thermally efficient package enables higher
   density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
   smaller end product
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• DC-DC Converters
• Power management functions
• Analog Switch