Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash® memory products provide 2Xthe bits in 1Xthe space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.

Product Features
■ High-Density Symmetrically-Blocked Architecture
    —64 128-Kbyte Erase Blocks (64 M)
    —32 128-Kbyte Erase Blocks (32 M)
■ 4.5 V–5.5 V VCC Operation
    —2.7 V–3.6 V and 4.5 V–5.5 V I/O Capable
■ 120 ns Read Access Time (32 M) 150 ns Read Access Time (64 M)
■ Enhanced Data Protection Features
    —Absolute Protection with VPEN = GND
    —Flexible Block Locking
    —Block Erase/Program Lockout during
    Power Transitions
■ Industry-Standard Packaging
    —SSOP Package (32, 64 M)
    TSOP Package (32 M)
■ Cross-Compatible Command Support
    —Intel Basic Command Set
    —Common Flash Interface
    —Scalable Command Set
■ 32-Byte Write Buffer
    —6 µs per Byte Effective Programming Time
■ 6,400,000 Total Erase Cycles (64 M) 3,200,000 Total Erase Cycles (32 M)
    —100,000 Erase Cycles per Block
■ Automation Suspend Options
    —Block Erase Suspend to Read
    —Block Erase Suspend to Program
■ System Performance Enhancements
    —STS Status Output
■ Operating Temperature –20 °C to + 85 °C (–40 °C to +85 °C on .25 micron ETOXVI) process technology parts)