EFA120B Hoja de datos - Excelics Semiconductor, Inc.
Número de pieza
EFA120B
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +28.0dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• EFA120BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 20mA PER BIN RANGE
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