Número de pieza
FCPF190N60E_F152
Fabricante
![Fairchild](/logo/Fairchild.png)
Fairchild Semiconductor
![Fairchild](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
FEATUREs
• 650 V @TJ = 150°C
• Max. RDS(on) = 190 mΩ
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
• 100% Avalanche Tested
Aplications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Número de pieza
componentes Descripción
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Fabricante
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