GT10J321(2001) Hoja de datos - Toshiba
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GT10J321
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Toshiba
High Power Switching Applications
Fast Switching Applications
● The 4th generation
● Enhancement-mode
● Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
● High speed :tf=0.03μ s(typ.)
● Low switching loss :Eon=0.26mJ(typ.)
:Eoff=0.18mJ(typ.)
● Low saturation voltage :VCE(sat)=2.0V(typ.)
● FRD included between emitter and collector
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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