GT15J121 Hoja de datos - Toshiba
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GT15J121
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High Power Switching Applications
Fast Switching Applications
● The 4th generation
● Enhancement-mode
● Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)
● High speed :tr=0.03μ s(typ.) :tf=0.08μ s(typ.)
● Low switching loss :Eon=0.23mJ(typ.) :Eoff=0.18mJ(typ.)
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT ( Rev : 2001 )
Toshiba
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