GT40T302 Hoja de datos - Toshiba
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GT40T302
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Parallel Resonance Inverter Switching Applications
• FRD included between emitter and collector
• Enhancement mode
• High speed IGBT: tf= 0.23 μs (typ.) (IC= 40 A)
FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC= 40 A)
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