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GT8G131 Hoja de datos - Toshiba

GT8G131 image

Número de pieza
GT8G131

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6 Pages

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180.3 kB

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Toshiba
Toshiba Toshiba

Strobe Flash Applications

•  Supplied in Compact and Thin Package Requires Only a Small Mounting Area
•  4th generation (trench gate structure) IGBT
•  Enhancement-mode
•  4-V gate drive voltage: VGE= 4.0 V (min) (@IC= 150 A)
•  Peak collector current: IC= 150 A (max)

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Ver
Toshiba
IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel
Ver
Toshiba
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Ver
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Ver
Toshiba

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