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H15ME1 Hoja de datos - Infineon Technologies

IHW15N120E1 image

Número de pieza
H15ME1

Other PDF
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page
14 Pages

File Size
1.8 MB

Fabricante
Infineon
Infineon Technologies Infineon

Features:
• Powerful monolithic body diode with low forward voltage
   designed for soft commutation only
• TRENCHSTOP™ technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
   - low VCEsat
   - easy parallel switching capability due to positive
      temperature coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
   //www.infineon.com/igbt/


APPLICATIONs:
• Induction cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications


Número de pieza
componentes Descripción
PDF
Fabricante
Reverse-Conducting IGBT with monolithic body diode
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Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
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Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
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Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies

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