Description
The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.

FEATUREs
• 1.2 Micron Radiation Hardened SOS CMOS
    - Total Dose 3 x 105 RAD (Si)
    - Transient Upset >1 x 1011 RAD (Si)/s
    - Single Event Upset < 1 x 10-12 Errors/Bit-Day
• Latch-up Free
• LET Threshold >250 MEV/mg/cm2
• Low Standby Supply Current 10mA (Max)
• Low Operating Supply Current 100mA (2MHz)
• Fast Access Time 50ns (Max), 35ns (Typ)
• High Output Drive Capability
• Gated Input Buffers (Gated by E2)
• Six Transistor Memory Cell
• Fully Static Design
• Asynchronous Operation
• CMOS Inputs
• 5V Single Power Supply
• Military Temperature Range -55°C to +125°C
• Industry Standard JEDEC Pinout