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IHW30N110R3 Hoja de datos - Infineon Technologies

IHW30N110R3 image

Número de pieza
IHW30N110R3

Other PDF
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page
15 Pages

File Size
1.7 MB

Fabricante
Infineon
Infineon Technologies Infineon

Features:
• Powerful monolithic body diode with low forward voltage
   designed for soft commutation only
• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Low VCEsat
• Easy parallel switching capability due to positive temperature
   coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
   //www.infineon.com/igbt/


APPLICATIONs:
• Induction cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications


Número de pieza
componentes Descripción
PDF
Fabricante
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Reverse-Conducting IGBT with monolithic body diode
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Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
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Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
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Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies

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