IHW30N120R Hoja de datos - Infineon Technologies
Número de pieza
IHW30N120R
componentes Descripción
Other PDF
no available.
PDF
page
12 Pages
File Size
983.4 kB
Fabricante
Infineon Technologies
Features:
• Powerful monolithic Body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications
Número de pieza
componentes Descripción
PDF
Fabricante
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Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
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