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IRF6892STRPBF Hoja de datos - International Rectifier

IRF6892SPBF image

Número de pieza
IRF6892STRPBF

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page
9 Pages

File Size
246.4 kB

Fabricante
IR
International Rectifier IR

Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

● RoHS Compliant and Halogen Free
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Ideal for CPU Core DC-DC Converters
● Optimized for Control FET Application
● Compatible with existing Surface Mount Techniques
● 100% Rg tested


Número de pieza
componentes Descripción
PDF
Fabricante
DirectFET® plus MOSFET with Schottky Diode
Ver
International Rectifier
DirectFET® plus MOSFET with Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
Infineon Technologies
HEXFET® Power MOSFET plus Schottky Diode ( Rev : 2008 )
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
International Rectifier
HEXFET® Power MOSFET plus Schottky Diode
Ver
Infineon Technologies

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