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IRF9Z24(2011) Hoja de datos - Vishay Semiconductors

IRF9Z24PBF image

Número de pieza
IRF9Z24

componentes Descripción

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page
9 Pages

File Size
254.1 kB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

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