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IRFI9640G Hoja de datos - Vishay Semiconductors

IRFI9640G image

Número de pieza
IRFI9640G

Other PDF
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page
8 Pages

File Size
1.6 MB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.


FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available

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Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Ver
Vishay Semiconductors
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Ver
Vishay Semiconductors
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
Ver
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
Ver
International Rectifier
HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
Ver
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
Ver
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
Ver
International Rectifier

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