Description
Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Surface Mount
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated