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IRFR3704ZPBF Hoja de datos - International Rectifier

IRFR3704ZPBF image

Número de pieza
IRFR3704ZPBF

Other PDF
  no available.

PDF
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page
12 Pages

File Size
264.7 kB

Fabricante
IR
International Rectifier IR

Benefits
● Very Low RDS(on) at 4.5V VGS
● Ultra-Low Gate Impedance
● Fully Characterized Avalanche Voltage
   and Current


APPLICATIONs
● High Frequency Synchronous Buck
   Converters for Computer Processor Power
● High Frequency Isolated DC-DC
   Converters with Synchronous Rectification
   for Telecom and Industrial Use
● Lead-Free

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
International Rectifier
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
Ver
International Rectifier
HEXFET® Power MOSFET VDSS=500V Rds(on) max=0.24Ω ID=20A
Ver
International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Ver
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
Ver
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
Ver
International Rectifier

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