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IRFR3704Z Hoja de datos - International Rectifier

IRFR3704Z image

Número de pieza
IRFR3704Z

componentes Descripción
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC

Other PDF
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page
11 Pages

File Size
213.4 kB

Fabricante
IR
International Rectifier IR

Benefits
    Very Low RDS(on)at 4.5V VGS
    Ultra-Low Gate Impedance
    Fully Characterized Avalanche Voltage and Current


APPLICATIONs
    High Frequency Synchronous Buck
    Converters for Computer Processor Power
    High Frequency Isolated DC-DC
    Converters with Synchronous Rectification for Telecom and Industrial Use

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Número de pieza
componentes Descripción
PDF
Fabricante
IRFR3704ZPBF
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
IRFR3704Z
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
IRFR3704ZPBF
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
International Rectifier
IRF7555
HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
Ver
International Rectifier
IRFP460N
HEXFET® Power MOSFET VDSS=500V Rds(on) max=0.24Ω ID=20A
Ver
International Rectifier
FB11N50A
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Ver
Vishay Semiconductors
IRFB18N50K
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Kersemi Electronic Co., Ltd.
IRFB18N50K
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Vishay Semiconductors
IRFBA22N50
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
Ver
International Rectifier
IRFPE40
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
Ver
International Rectifier

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