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IS41C16257-35K Hoja de datos - Integrated Silicon Solution

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IS41C16257-35K

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page
17 Pages

File Size
99.2 kB

Fabricante
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems.


FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply:
    -- 5V ± 10% (IS41C16257)
    -- 3.3V ± 10% (IS41LV16257)
• Byte Write and Byte Read operation via two CAS
• Industrial temperature available

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Número de pieza
componentes Descripción
PDF
Fabricante
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Ver
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Ver
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Ver
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Ver
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Ver
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Ver
Integrated Circuit Solution Inc
256K x 16 DYNAMIC RAM FAST PAGE MODE
Ver
Taiwan Memory Technology
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Ver
Integrated Circuit Solution Inc
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Ver
Integrated Silicon Solution
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Ver
AMIC Technology

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