HiPerFET™ Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt

FEATUREs
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
    - easier to drive
    - faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load Switching (UIS)
• Molding epoxies meet UL94V-0 flammability classification

Advantages
• Easy to mount
• Space savings
• High power density