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IXFN21N100Q Hoja de datos - IXYS CORPORATION

IXFN21N100Q image

Número de pieza
IXFN21N100Q

componentes Descripción

Other PDF
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PDF
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page
4 Pages

File Size
122.1 kB

Fabricante
IXYS
IXYS CORPORATION IXYS

Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt


FEATUREs
• IXYS advanced low Qg process
• Low gate charge and capacitances
    - easier to drive
    - faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification


APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Easy to mount
• Space savings
• High power density

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
Q-Class Power MOSFETs
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IXYS CORPORATION
Power MOSFETs Q-Class
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IXYS CORPORATION
Power MOSFETs Q-Class
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IXYS CORPORATION
Power MOSFETs Q-Class
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IXYS CORPORATION
Power MOSFETs Q-Class
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IXYS CORPORATION
Power MOSFETs Q-Class
Ver
International Rectifier
HiPerFET Power MOSFETs Q-Class
Ver
IXYS CORPORATION
HiPerFET Power MOSFETs Q-Class
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IXYS CORPORATION
HiPerFET Power MOSFETs Q-Class ( Rev : 2000 )
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IXYS CORPORATION
HiPerFET Power MOSFETs Q-Class
Ver
IXYS CORPORATION

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