Número de pieza
M6MGB331S8AKT
Fabricante
![Renesas](/logo/Renesas.png)
Renesas Electronics
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Description
The M6MGB/T331S8AKT is a Stacked micro Multi Chip Package (S- mMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, , single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation can be executed.
8M-bit SRAM is a 1,048,576 bytes / 524,288 words asynchronous SRAM fabricated by CMOS technology for the peripheral circuit .
The M6MGB/T331S8AKT is suitable for a high performance cellular phone and a mobile PC that are required to be small mounting area, weight and small power dissipation
FEATUREs
Access Time Flash 70ns (Max.)
SRAM 85ns (Max.)
Supply Voltage VCC=2.7 ~ 3.0V
Ambient Temperature Ta=-40 ~ 85 °C
Package 52pin TSOP(Type-II),
Lead pitch 0.4mm
Outer-lead finishing:Sn-Cu
APPLICATION
Mobile communication products
Número de pieza
componentes Descripción
PDF
Fabricante
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package)
Renesas Electronics
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
MITSUBISHI ELECTRIC
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
MITSUBISHI ELECTRIC
16,777,216-BIT(1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT(262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
MITSUBISHI ELECTRIC
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
Toshiba
4,194,304 Word by 8 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
16777216-BIT (1048576-WORD BY 16-BIT / 2097152-WORD BY 8-BIT) CMOS STATIC RAM
Hitachi -> Renesas Electronics
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
Toshiba
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC