Número de pieza
M6MGT160S4BVP
Fabricante
MITSUBISHI ELECTRIC
DESCRIPTION
The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 2097152 bytes /1048576 words 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .
FEATURES
• Access time
Flash Memory 90ns (Max.)
SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature
W version Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch
APPLICATION
Mobile communication products
Número de pieza
componentes Descripción
PDF
Fabricante
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