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MG100J6ES50 Hoja de datos - Toshiba

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MG100J6ES50

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Toshiba
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High Power Switching Applications
Motor Control Applications

● The electrodes are isolated from case.
● High input impedance.
● 6 IGBTs built into 1 package.
● Enhancement-mode.
● High speed : tf = 0.30µs (Max) (IC = 100A)
                        trr = 0.15µs (Max) (IF = 100A)
● Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A)

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Fabricante
TOSHIBA GTR Module Silicon N Channel IGBT ( Rev : 1997 )
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Ver
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Ver
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Ver
Toshiba

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