DESCRIPTION
The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers.

FEATURES
● High linear power gain
   GLP = 11 dB (TYP.) @ f = 12 GHz
● High output power at 1 dB gain compression
   P1dB = 13dBm (TYP.) @ f = 12 GHz
● High reliability and stability

APPLICATION
   S to Ku band amplifiers