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N08L163WC2A image

Número de pieza
N08L163WC2A

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page
10 Pages

File Size
249.6 kB

Fabricante
ETC
ETC ETC

[NanoAmp Solutions, Inc.]

Overview
The N08L163WC2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. 


FEATUREs
• Single Wide Power Supply Range
   2.3 to 3.6 Volts
• Very low standby current
   4.0µA at 3.0V (Typical)
• Very low operating current
   2.0mA at 3.0V and 1µs(Typical)
• Very low Page Mode operating current
   1.0mA at 3.0V and 1µs (Typical)
• Simple memory control
   Dual Chip Enables (CE1 and CE2)
   Byte control for independent byte operation
   Output Enable (OE) for memory expansion
• Low voltage data retention
   Vcc = 1.8V
• Very fast output enable access time
   25ns OE access time
• Very fast Page Mode access time
   tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver


Número de pieza
componentes Descripción
PDF
Fabricante
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Ver
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Ver
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
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AMI Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
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NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
Ver
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
Ver
ON Semiconductor
512K x 16 8Mb Asynchronous SRAM
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Giga Semiconductor
512K x 16 8Mb Asynchronous SRAM
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Giga Semiconductor
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
Ver
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
Ver
Unspecified

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