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N08L163WC1C Hoja de datos - NanoAmp Solutions, Inc.

N08L163WC1C image

Número de pieza
N08L163WC1C

Other PDF
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page
9 Pages

File Size
164.5 kB

Fabricante
NANOAMP
NanoAmp Solutions, Inc. NANOAMP

Overview
The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.


FEATUREs
• Single Wide Power Supply Range
    2.2 to 3.6 Volts
• Very low standby current
    2.0µA at 3.0V (Typical)
• Very low operating current
    1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.5V
• Very fast output enable access time
    25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Avaliable

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Número de pieza
componentes Descripción
PDF
Fabricante
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Ver
Unspecified
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Ver
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
Ver
AMI Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
Ver
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
Ver
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
Ver
ON Semiconductor
512K x 16 8Mb Asynchronous SRAM
Ver
Giga Semiconductor
512K x 16 8Mb Asynchronous SRAM
Ver
Giga Semiconductor
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
Ver
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
Ver
Unspecified

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