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NTLJF1103P image

Número de pieza
NTLJF1103P

componentes Descripción

Other PDF
  2016  

PDF
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page
4 Pages

File Size
68.3 kB

Fabricante
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode
−8 V, −4.3 A, Cool P−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm,
WDFN Package


FEATUREs
• WDFN 2x2 mm Package with Exposed Drain Pad for
   Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.5 V VGS Rated RDS(on)
• Low VF, 2 A Schottky Diode
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• This is a Pb−Free Device


APPLICATIONs
• DC−DC Buck Converter
• Low Voltage Hard Disk DC Power Source


Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET and Schottky Diode
Ver
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
Ver
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2004 )
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode
Ver
ON Semiconductor

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